Wide-angle perfect absorber/thermal emitter in the terahertz regime
نویسندگان
چکیده
منابع مشابه
Surface-modified GaAs terahertz plasmon emitter
We studied the THz emission from n-GaAs plasmon emitters modified by low-temperature-grown ~LT! GaAs surface layers. The THz emission is increased since the LT GaAs pins the Fermi level at a midgap position, increasing the surface depletion field. For a THz emitter with a 70-nm-thick LT GaAs layer we observe without external fields a THz emission intensity of 140 nW. In addition, the long-term ...
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ژورنال
عنوان ژورنال: Physical Review B
سال: 2009
ISSN: 1098-0121,1550-235X
DOI: 10.1103/physrevb.79.033101